MOCVD Reactor
This lab has two metal organic chemical vapor deposition (MOCVD) systems to grow full-range of III-Nitride and III-Oxide material systems. The systems are capable of different types of doping and have a growth rate higher than 1 micron per hour. One system is dedicated to III-nitrides i.e. boron nitride, aluminum nitride which produce layer structures for visible and ultraviolet Light Emitting Diodes and high-power Field Effect Transistors. The other system is dedicated for III-oxide material system i.e. Gallium oxide, aluminum gallium oxides to produce layer structures for power FETs capable of operating at high temperatures.